These experiments also showed a possible source of defects is a highly doped zn - diffused region in close proximity to the recombination region 這些實(shí)驗(yàn)還表明,緊接近復(fù)合區(qū)的高摻zn的擴(kuò)散區(qū)有可能是一個(gè)缺陷源。
The performance of devices is directly decided by the impurity distribution in the diffused region , and the impurity distribution may be affected by the material thermal properties , the mechanism of diffusion , the power of laser and the diffusion time 激光誘導(dǎo)擴(kuò)散過程中,基片的熱物理特性、擴(kuò)散源的擴(kuò)散機(jī)理、激光束的功率大小和擴(kuò)散時(shí)間以及光束的聚焦?fàn)顩r等等,都會(huì)對(duì)擴(kuò)散結(jié)果產(chǎn)生重要的影響,而擴(kuò)散層的雜質(zhì)分布情況將直接決定器件的性能指標(biāo)。